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SKFM20100C-D2

Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Moisture Sensitivity Level 1.

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Specifications
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IFAV (mA)
20
Specifications
VRRM (V)
100
VF IF(mA)
10
Max(μA) IR @ Ta=25℃
500
VR(V) IR @ Ta=25℃
100
Marking Code
SK20100
Case
TO-263
IFSM (A) 8.3ms single half sine-wave
150
VF
Max(V)
0.85

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