SE2101E
SE2101E is P-Channel enhancement
mode power MOSFET which is produced
with high cell density and DMOS trench
technology .This device particularly suits
lowvoltage applications, especially for
battery powered circuits, the tiny and thin
outline saves PCB consumption.
Specifications
Specifications
VDS(V)
20
Marking Code
21E/39K
Case
SOT-523
VGS (±V)
8
ID (A)
0.8
PD (W)
0.25
Polarity
P
RDS(ON) (mΩ max) at VGS=
10V
-
5V
-
4.5V
300
2.5V
400
